Hardmask designs for dry etching FeRAM capacitor stacks

ABSTRACT

An embodiment of the instant invention is a ferroelectric capacitor formed over a semiconductor substrate, the ferroelectric capacitor comprising: a bottom electrode formed over the semiconductor substrate, the bottom electrode comprised of a bottom electrode material ( 304  of FIG.  4   a ); a top electrode formed over the bottom electrode and comprised of a first electrode material ( 306 and  308  of FIG.  4   a ); a ferroelectric material ( 306  of FIG.  4   a ) situated between the top electrode and the bottom electrode; and a hardmask formed on the top electrode and comprising a bottom hardmask layer ( 402  of FIG.  4   a ) and a top hardmask layer ( 408  of FIG.  4   a ) formed on the bottom hardmask layer, the top hardmask layer able to with stand etchants used to etch the bottom electrode, the top electrode, and the ferroelectric material to leave the bottom hardmask layer substantially unremoved during the etch and the bottom hardmask layer being comprised of a conductive material which substantially acts as a hydrogen diffusion barrier.

CROSS-REFERENCE TO RELATED PATENT/PATENT APPLICATIONS

This application claims priority under 35 USC § 119 (e) (1) ofProvisional Application No. 60/171,794, filed Dec. 12, 1999.

The following commonly assigned patent/patent applications are herebyincorporated herein by reference:

Pat. No./Ser. Nos. 09/739,065 09/741,650 09/702,985 09/741,67509/741,677 09/741,688 6,211,035 09/105,738 09/238,211 FIELD OF THEINVENTION

The instant invention pertains to semiconductor device fabrication andprocessing and more specifically to a method of fabricating aferroelectric memory device.

BACKGROUND OF THE INVENTION

Several trends exist, today, in the semiconductor device fabricationindustry and the electronics industry. Devices are continuously gettingsmaller and smaller and requiring less and less power. A reason for thisis that more personal devices are being fabricated which are very smalland portable, thereby relying on a small battery as its only supplysource. For example, cellular phones, personal computing devices, andpersonal sound systems are devices which are in great demand in theconsumer market. In addition to being smaller and more portable,personal devices are requiring more computational power and on-chipmemory. In light of all these trends, there is a need in the industry toprovide a computational device which has memory and logic functionsintegrated onto the same semiconductor chip. Preferably, this memorywill be configured such that if the battery dies, the contents of thememory will be retained. Such a memory device which retains its contentswhile power is not continuously applied to it is called a non-volatilememory. Examples of conventional non-volatile memory include:electrically erasable, programmable read only memory (“EEPPROM”) andFLASH EEPROM.

A ferroelectric memory (FeRAM) is a non-volatile memory which utilizes aferroelectric material, such as strontium bismuth tantalate (SBT) orlead zirconate titanate (PZT), as a capacitor dielectric situatedbetween a bottom electrode and a top electrode. Both read and writeoperations are performed for a FeRAM. The memory size and memoryarchitecture effects the read and write access times of a FeRAM. Table 1illustrates the differences between different memory types.

TABLE 1 FeRAM Property SRAM Flash DRAM (Demo) Voltage >0.5 V Read >0.5V >1 V 3.3 V Write (12 V) (±6 V) Special Transistors NO YES YES NO (High(Low Voltage) Leakage) Write Time <10 ns 100 ms <30 ns 60 ns WriteEndurance >10¹⁵ <10⁵  >10¹⁵ >10¹³ Read Time (single/ <10 ns <30 ns <30ns / <2 ns 60 ns multi bit) Read Endurance >10¹⁵ >10¹⁵ >10¹⁵ >10¹³ AddedMask for 0 ˜6-8 ˜6-8 ˜3 embedded Cell Size (F˜metal ˜80 F² ˜8 F² ˜8 F²˜18 F² pitch/2) Architecture NDRO NDRO DRO DRO Non volatile NO YES NOYES Storage I Q Q P

The non-volatility of an FeRAM is due to the bistable characteristic ofthe ferroelectric memory cell. Two types of memory cells are used, asingle capacitor memory cell and a dual capacitor memory cell. Thesingle capacitor memory cell (referred to as a 1T/1C or 1C memory cell)requires less silicon area (thereby increasing the potential density ofthe memory array), but is less immune to noise and process variations.Additionally, a 1C cell requires a voltage reference for determining astored memory state. The dual capacitor memory cell (referred to as a2T/2C or 2C memory cell) requires more silicon area, and it storescomplementary signals allowing differential sampling of the storedinformation. The 2C memory cell is more stable than a 1C memory cell.

In a 1T/1C FeRAM cell there is one transistor and one storage capacitor.The bottom electrode of the storage capacitor is connected to the drainof the transistor. The 1T/1C cell is read from by applying a signal tothe gate of the transistor (wordline) thereby connecting the bottomelectrode of the capacitor to the source of the transistor (bitline). Apulse signal is then applied to the top electrode contact (plate line ordrive line). The potential on the bitline of the transistor is,therefore, the capacitor charge divided by the bitline capacitance.Since the capacitor charge is dependent upon the bistable polarizationstate of the ferroelectric material, the bitline potential can have twodistinct values. A sense amplifier is connected to the bitline anddetects the voltage associated with a logic value of either 1 or 0.Frequently the sense amplifier reference voltage is a ferroelectric ornon-ferroelectric capacitor connected to another bitline that is notbeing read. In this manner, the memory cell data is retrieved.

A characteristic of a ferroelectric memory is that a read operation isdestructive in some applications. The data in a memory cell must berewritten back to the memory cell after the read operation is completed.If the polarization of the ferroelectric is switched, the read operationis destructive and the sense amplifier must rewrite (onto that cell) thecorrect polarization value as the bit just read from the cell. This issimilar to the operation of a DRAM. If the drive line voltage was-smallenough not to switch the ferroelectric then the read operation was notdestructive. In general a non-destructive read requires a much largercapacitor than a destructive read and, therefore, requires a larger cellsize.

A 2T/2C memory cell in a memory array couples to a bit line (“bitline”)and the inverse of the bit line (“bitline-bar”) that is common to manyother memory types (for example, static random access memories). Memorycells of a memory block are formed in memory rows and memory columns.The dual capacitor ferroelectric memory cell comprises two transistorsand two ferroelectric capacitors. A first transistor couples between thebitline and a first capacitor. A second transistor couples between thebitline-bar and a second capacitor. The first and second capacitors havea common terminal or plate to which a signal is applied for polarizingthe capacitors.

In a write operation, the first and second transistors of the dualcapacitor ferroelectric memory cell are enabled to couple the capacitorsto the complementary logic levels on the bitline and the bitline-barline corresponding to a logic state to be stored in memory. The commonterminal of the capacitors is pulsed during a write operation topolarize the dual capacitor memory cell to one of the two logic states.

In a read operation, the first and second transistors of the dualcapacitor memory cell are enabled to couple the information stored onthe first and second capacitors to the bitline and the bitline-bar line.A differential signal is generated across the bitline and thebitline-bar line by the dual capacitor memory cell. The differentialsignal is sensed by a sense amplifier which provides a signalcorresponding to the logic level stored in memory.

A memory cell of a ferroelectric memory is limited to a finite number ofread and write operations before the memory cell becomes unreliable. Thenumber of operations that can be performed on a FeRAM memory is known asthe endurance of a memory. The endurance is an important factor in manyapplications that require a nonvolatile memory. Other factors such asmemory size, memory speed, and power dissipation also play a role indetermining if a ferroelectric memory is viable in the memory market.

Several requirements either presently exist or may become requirementsfor the integration of FeRAM with other device types. One suchrequirement involves utilizing, as much as possible, the conventionalfront end and backend processing techniques used for fabricating thevarious logic and analog devices on the chip to fabricate this chipwhich will include FeRAM devices. In other words, it is beneficial toutilize as much of the process flow for fabricating these standard logicdevices (in addition to I/O devices and potentially analog devices) aspossible, so as not to greatly disturb the process flow (thus increasethe process cost and complexity) merely to integrate the FeRAM devicesonto the chip.

It has been proposed to place the FeRAM process module at variouslocations of the process flow. For example, if the FeRAM process moduleis placed over the first level of metallization (Metal-1) then acapacitor over bitline structure can be created with the advantage thata larger capacitor can be created. One disadvantage of the approach isthat either Metal-1 (the first metal layer on the chip, which is the oneclosest to the substrate) or local interconnect should be compatiblewith FeRAM process temperatures (for tungsten for example) or the FeRAMprocess temperature should be lowered to be compatible with standardmetallization (Al ˜450 C, Cu and low dielectric constant materials ˜400C). This location has some advantages for commodity memory purposes buthas cost disadvantages for embedded memory applications.

Another possible location for the FeRAM process module is near the endof the back-end process flow. The principal advantage of this approachis that it keeps new contaminants in the FeRAM module (Pb, Bi, Zr, Ir,Ru, or Pt) out of more production tools. This solution is most practicalif the equipment used after deposition of the first FeRAM film isdedicated to the fabrication of the FeRAM device structures and,therefore, is not shared. However, this solution has the drawback ofrequiring FeRAM process temperatures compatible with standardmetallization structures (suggested limitations discussed above). Inaddition, the interconnection of the FeRAM capacitor to underlyingtransistors and other needs of metallization are not compatible with aminimum FeRAM cell size. The requirements for the other locations willhave many of the same concerns but some requirements will be different.

The FeRAM process module is preferably compatible with standard logicand analog device front-end process flows that include the use oftungsten contacts as the bottom contact of the capacitor. The FeRAMthermal budget must also be low enough so that it does not impact thefront end structures such as the low resistance structures (whichincludes the tungsten plugs and silicided source/drains and gates)required by most logic devices. In addition, transistors and other frontend devices, such as diodes, are sensitive to contamination.Contamination from the FeRAM process module, either direct (such as bydiffusion in the chip) or indirect (cross contamination through sharedequipment); should be addressed so as to avoid transistor and diodedegradation. The FeRAM devices and process module should also becompatible with standard backend process flow. Therefore the FeRAMprocess module should have minimum degradation of logic metallization'sresistance and parasitic capacitance between metal and transistor. Inaddition, the FeRAM devices should not be degraded by the backendprocess flow with minimal, if any modification. This is a significantchallenge since ferroelectric capacitors have been shown to be sensitiveto hydrogen degradation and most logic backend process flows utilizehydrogen and/or deuterium in many of the processes (such as in theformation of SiO₂ and Si₃N₄, CVD tungsten deposition, SiO₂ via etch, andforming gas anneals).

Commercial success of FeRAM also requires minimization of embeddedmemory cost. Total memory cost is primarily dependent on cell size,periphery ratio size, impact of yield, and additional process costsassociated with memory. In order to have cost advantage per bit comparedto standard embedded memories such as embedded DRAM and Flash it isdesirable to have FeRAM cell sizes that are similar to those obtainedwith standard embedded memory technology.

SUMMARY OF THE INVENTION

In essence, the instant invention relates to the fabrication of an FeRAMdevice that is either a stand-alone device or one which is integratedonto a semiconductor chip that includes many other device types. Thefollowing discussion is based on the concept of creating theferroelectric capacitors in a FeRAM process module that occurs betweenthe front end module (defined to end with the formation of tungsten,which has the chemical symbol W, contacts) and backend process module(mostly metallization).

Some of the methods discussed in this patent to minimize cell sizeinclude making the process flow less sensitive to lithographymisalignment, forming the capacitor directly over the contact, and usinga single mask for the capacitor stack etch. Some of the methodsdiscussed in this patent, to reduce the added process cost, may requiretwo additional masks for the FeRAM process module and a planar capacitorwhich reduces the complexity of the needed processes.

Although this patent focuses on using a planar capacitor, a threedimensional capacitor using post or cup structure can be fabricatedusing many of the same concepts and processes. The planar structure isillustrated because it uses a simpler process and is cheaper to make.The 3D capacitor is preferred when the planar capacitor area needed forminimum charge storage considerations limits the cell size. In thissituation, the capacitor area enhancement associated with the 3Dconfiguration allows a smaller planar cell size. DRAM devices have usedthis approach for many years in order to reduce cell area.

An embodiment of the instant invention is a ferroelectric capacitorformed over a semiconductor substrate, the ferroelectric capacitorcomprising: a bottom electrode formed over the semiconductor substrate,the bottom electrode comprised of a bottom electrode material; a topelectrode formed over the bottom electrode and comprised of a firstelectrode material; a ferroelectric material situated between the topelectrode and the bottom electrode; and a hardmask formed on the topelectrode and comprising a bottom hardmask layer and a top hardmasklayer formed on the bottom hardmask layer, the top hardmask layer ableto with stand etchants used to etch the bottom electrode, the topelectrode, and the ferroelectric material to leave the bottom hardmasklayer substantially unremoved during the etch and the bottom hardmasklayer being comprised of a conductive material which substantially actsas a hydrogen diffusion barrier. Preferably, the bottom hardmask layeris comprised of: TiN, TiAlN, TaN, CrN, HfN, ZrN, TaSiN, TiSiN, TaAlN,CrAlN and any stack or combination thereof, and the top hardmask layeris comprised of a material selected from the group consisting of: dopedSiO₂, undoped SiO₂, SiN, SiON, SiC, SiCN, SiCON, a low K dielectric, andany stack or combination thereof. If the top hardmask layer is comprisedof a first top hardmask layer situated on a second top hardmask layer,then, preferably, the first top hardmask material is comprised of: Ti,TiN, TiAl, TiAlN, Al, AlN, Ta, TaN, Zr, ZrN, Hf, HfN, TiSi, TiSiN, TaSi,TaSiN, TaAl, TaAlN, CrAl, CrAlN, SiO₂ (doped or undoped), SiN, SiON,SiC, SiCN, SiCON, or a low K dielectric, and any stack or combinationthereof, and the second top hardmask layer is comprised of: AlO_(x),TiO_(x), TiAlO_(x), TaO_(x), CrO_(x), HfO_(x), ZrO_(x), TaSiO_(x),TiSiO_(x), TaAlO_(x), CrAlO_(x), Pt, Ir, IrO_(x), Rh, RhO_(x), Au, Ag,Pd, PdO_(x) , and any stack or combination thereof. Preferably, the topelectrode is comprised of: iridium, iridium oxide, and any combinationor stack thereof, the bottom electrode is comprised of: iridium, iridiumoxide, and any combination or stack thereof, and the ferroelectricmaterial is comprised of PZT.

Another embodiment of the instant invention is a ferroelectric capacitorformed over a semiconductor substrate, the ferroelectric capacitorcomprising: a bottom diffusion barrier formed over the semiconductorsubstrate, the bottom diffusion barrier comprised of a first conductivematerial which substantially acts as a hydrogen diffusion barrier; abottom electrode formed on the bottom diffusion barrier and comprised ofa bottom electrode material; a top electrode formed over the bottomelectrode and comprised of a first electrode material; a ferroelectricmaterial situated between the top electrode and the bottom electrode;and a hardmask formed on the top electrode and comprising a bottomhardmask layer and a top hardmask layer formed on the bottom hardmasklayer, the top hardmask layer able to with stand etchants used to etchthe bottom diffusion barrier, the bottom electrode, the top electrode,and the ferroelectric material so as to leave the bottom hardmask layersubstantially unremoved during the etch and the bottom hardmask layerbeing comprised of a second conductive material which substantially actsas a hydrogen diffusion barrier. Preferably, the bottom hardmask layeris comprised of: TiN, TiAlN, TaN, CrN, HfN, ZrN, TaSiN, TiSiN, TaAlN,CrAlN and any stack or combination thereof, and the top hardmask layeris comprised of: doped SiO₂, undoped SiO₂, SiN, SiON, SiC, SiCN, SiCON,a low K dielectric, and any stack or combination thereof. If the tophardmask layer is comprised of a first top hardmask layer situated on asecond top hardmask layer, then, preferably, the first top hardmaskmaterial is comprised of: Ti, TiN, TiAl, TiAlN, Al, AlN, Ta, TaN, Zr,ZrN, Hf, HfN, TiSi, TiSiN, TaSi, TaSiN, TaAl, TaAlN, CrAl, CrAlN, SiO₂(doped or undoped), SiN, SiON, SiC, SiCN, SiCON, or a low K dielectric,and any stack or combination thereof, and the second top hardmask layeris comprised of: AlOx, TiO_(x), TiAlO_(x), TaO_(x), CrO_(x), HfO_(x),ZrO_(x), TaSiO_(x), TiSiO_(x), TaAlO_(x), CrAlO_(x), Pt, Ir, IrO_(x),Rh, RhO_(x), Au, Ag, Pd, PdO_(x), and any stack or combination thereof.Preferably, the top electrode is comprised of: iridium, iridium oxide,and any combination or stack thereof, the bottom electrode is comprisedof: iridium, iridium oxide, and any combination or stack thereof, andthe ferroelectric material is comprised of PZT. The bottom diffusionbarrier is, preferably, comprised of: TiN, TiAlN, TaN, CrN, HfN, ZrN,TaSiN, TiSiN, TaAlN, CrAlN and any stack or combination thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a partially fabricated device whichis fabricated using the method of one embodiment of the instantinvention.

FIG. 2 is a flow diagram illustrating the process flow of one embodimentof the instant invention.

FIGS. 3a-3 c are cross-sectional views of a partially fabricatedferroelectric memory device which is fabricated using the method of oneembodiment of the instant invention as is illustrated in FIG. 2.

FIGS. 4a-4 h are cross-sectional views of a partially fabricated FeRAMdevice which is fabricated using the method of one embodiment of theinstant invention.

Similar reference numerals are used throughout the figures to designatelike or equivalent features. The figures are not drawn to scale. Theyare merely provided to illustrate the affect of the method of theinstant invention.

DETAILED DESCRIPTION OF THE DRAWINGS

While the following description of the instant invention revolves aroundthe integration of the FeRAM devices with logic devices and otherdevices which can be found on a digital signal processor,microprocessor, smart card, microcomputer, microcontroller or system ona chip, the instant invention can be used to fabricate stand-alone FeRAMdevices or FeRAM devices integrated into a semiconductor chip which hasmany other device types. In particular, the improved performance of theFeRAM device of the instant invention compared to standard semiconductormemories appears to make FeRAM the memory of choice for any handhelddevice which requires low power and large degree of device integration.The figures provided herewith and the accompanying description of thefigures are merely provided for illustrative purposes. One of ordinaryskill in the art should realize, based on the instant description, otherimplementations and methods for fabricating the devices and structuresillustrated in the figures and in the following description. Forexample, while shallow trench isolation structures (“STI”) areillustrated, any conventional isolation structures may be used, such asfield oxidation regions (also known as LOCOS regions) or implantedregions. In addition, while structure 102 is preferably a single-crystalsilicon substrate which is doped to be n-type or p-type, structure 102(FIG. 1) may be formed by fabricating an epitaxial silicon layer on asingle-crystal silicon substrate.

Referring to FIG. 1, two devices are illustrated in FIG. 1. Device 103represents a partially fabricated version of a FeRAM cell of the instantinvention, and device 105 represents any high-voltage transistor,low-voltage transistor, high-speed logic transistor, I/O transistor,analog transistor, or any other device which may be included in adigital signal processor, microprocessor, microcomputer, microcontrolleror any other semiconductor device. Except for the specific cellstructure provided in device 103, the structures utilized in device 103should be the same as the device structures of device 105 (except forsome possible variations in the transistors due to the different devicetypes that device 105 may be).

Basically, gate structures 106 include a gate dielectric (preferablycomprised of silicon dioxide, an oxynitride, a silicon nitride, BST,PZT, a silicate, any other high-k material, or any combination or stackthereof), a gate electrode (preferably comprised of polycrystallinesilicon doped either p-type or n-type with a silicide formed on top or ametal such as titanium, tungsten, TiN, tantalum, TaN or a metal), andside wall insulators (preferably comprised of an oxide, a nitride, anoxynitride, or a combination or stack thereof. In general the genericterms oxide, nitride and oxynitride refer to silicon oxide, siliconnitride and silicon oxy-nitride. The term “oxide” may, in general,include doped oxides as well such as boron and/or phosphorous dopedsilicon oxide. Source/drain regions 108 are preferably implanted usingconventional dopants and processing conditions. Lightly doped drainextensions as well as pocket implants may also be utilized. In addition,the source/drain regions 108 may be silicided (preferably with titanium,cobalt, nickel, tungsten or other conventional silicide material).

A dielectric layer 112 is formed over the entire substrate and ispatterned and etched so as to form openings for contacts to thesubstrate and gate structures to be formed (step 202). These openingsare filled with one or more conductive materials, such as plug 114(preferably comprised of a metal such as tungsten, molybdenum, titanium,titanium nitride, tantalum nitride, metal silicide such as Ti, Ni or Co,copper or doped polysilicon). A liner/barrier layer may or may not beformed between the plug 114 and dielectric 112. A liner/barrier layer116 is illustrated in FIG. 1 and is, preferably, comprised of Ti, TiN,TaSiN, Ta, TaN, TiSiN, a stack thereof, or any other conventionalliner/barrier material. Preferably, the contacts will be formed so as toland on the silicided regions of the source/drain regions and gatestructures.

The dielectric layer 112 is preferably comprised of SiO₂ (doped orundoped with preferable dopants such as boron or phosphorous) possiblywith a layer of hydrogen or deuterium containing silicon nitride next tothe gate. After deposition of the diffusion barrier it is likely thatthe barrier will be planarized for improved lithography of overlyinglayers using a process such as chemical mechanical polishing. Inaddition, an added diffusion barrier/etch stop might be included nearthe top surface of layer 112 such as AlO_(x), AlN, Si₃N₄, TiO₂, ZrO₂, orTaO_(x) that would be deposited after planarization process. Thisdiffusion barrier is particularly useful if damascene processes are usedto create the via or metallization to the contact. The formation of plug114 will require etching through this optional barrier/etch stop.

Formation of metal structures which are situated above the contacts isconsidered to be part of the back end processes. Other than the specificFeRAM process module, the back end process steps should be thosestandard in the semiconductor industry. The metallization will,therefore, either be Al or Cu based. The Al is preferably etched whilethe Cu is preferably used in a damascene approach. However, etching Cuand Al formed in a damascene process is also possible. Aluminummetallization will preferably have CVD tungsten plugs or Al plugs, andthe Al will preferably be Cu-doped for improved electromigrationresistance. Metal diffusion barriers for Al preferably include TiNand/or Ti. Copper metallization will preferably have Cu or W plugs witheither Ti, TiN, TiSiN, Ta, tantalum nitride, and/or TaSiN diffusionbarriers. A thin dielectric layer (not shown) may be formed between eachof the interlevel dielectric (ILD) layers (layers 112, 134 and 160). Ifformed, this thin layer is, preferably, comprised of a silicon nitride,silicon carbide, SiCNO or a silicon oxide (preferably a high-densityplasma oxide). In addition, interlevel dielectric layers 112, 134, and160 are, preferably, comprised of an oxide, FSG, PSG, BPSG, PETEOS, HDPoxide, a silicon nitride, silicon oxynitride, silicon carbide, siliconcarbo-oxy-nitride, a low dielectric constant material (preferably SiLK,porous SiLK, teflon, low-K polymer (possibly porous), aerogel, xerogel,BLACK DIAMOND, HSQ, or any other porous glass material), or acombination or stack thereof. The interconnects and the metal lines are,preferably, comprised of the same material. Preferably, plugs 136 and150 and conductors 144 and 164 are comprised of a metal material(preferably copper, aluminum, titanium, TiN, tungsten, tungsten nitride,or any combination or stack thereof). A barrier/liner may be formedbetween the plug and the interlevel dielectric layer. If formed, thebarrier/liner layer (shown as layers 138 and 148 and liners 142, 146,162 and 166) is, preferably, comprised of Ti, TiN, W, tungsten nitride,Ta, tantalum nitride, any conventional barrier/liner layer, or anycombination or stack thereof). The interlayer dielectric and plugmaterial should be compatible with the FeRAM thermal budget. Withexisting technology (i.e., one that incorporates a W plug and SiO₂ ILD),the FeRAM thermal budget should be less than approximately 600 or 650 C.If the ILD is modified to include a low dielectric constant (“low K”)layer, the FeRAM thermal budget will need to be reduced further. Thepreferred interlayer dielectric 112 is therefore a material that canwithstand a thermal budget in excess of 600 C, such as silicon oxide(doped and/or undoped), silicon nitride, and/or silicon oxy-nitride.

Level 127 is added so as to accommodate the FeRAM cells (FeRAM processmodule). This FeRAM process module allows the creation of ferroelectricor high dielectric constant capacitors to be easily added with maximumthermal budget for the new process module yet not impact the thermalbudget of backend process. In particular, this level allows FeRAMdevices with capacitor under bitline configuration compatible with ahigh-density memory. However, it is possible, if planarity is not anecessity, to form the FeRAM devices while not forming layer 127 inregion 105. Hence, the FeRAM portion 103 would be taller than the region105 by the height of layer 127.

FeRAM capacitor 125 is comprised of several layers. Conductive barrierlayer 122 may or may not be formed depending on whether plug 114 needsto be protected during subsequent processing of the capacitordielectric. If formed, conductive barrier layer 122 is, preferably,comprised of TiAlN or other possible barriers (some of which have a slowoxidation rate compared to TiN) which include: TaSiN, TiSiN, TiN, TaN,HfN, ZrN, HfAlN, CrN, TaAlN, CrAlN, or any other conductive material.The thickness of this layer is, preferably, on the order of 60 nm (for a0.18 um via). In the future, scaling the via size will allow scaling ofthe barrier thickness as well. The preferred deposition technique forthese barrier layers is reactive sputter deposition using Ar+N₂ orAr+NH₃. It should be noted that Ar is the standard inert gas used forsputter deposition or physical etching based on cost and performance. Itis possible to use other inert gasses instead of Ar for theseapplications throughout the process described in this document. Otherdeposition techniques that might be used include chemical vapordeposition (CVD) or plasma enhanced CVD (PECVD). CVD of nitridesactually results in carbo-oxy-nitrides especially when metalorganicprecursors are used and this is also acceptable in many cases. For thepreferred W contact it is preferred to deposit a bilayer diffusionbarrier. First, CVD TiN (40 nm is preferred) is deposited followed byPVD TiAlN (30 nm preferred). Even more preferred would be CVD or PECVDdeposition of TiAlN (˜60 nm). The preferred proportion of aluminum inTiAlN is around 30-60% Al and 40-50% is more preferred in order to haveimproved oxidation resistance. A better diffusion barrier (such as theone of an embodiment of the instant invention) will, in general, allowthe oxygen stable bottom electrode material to be thinner or a higherprocess temperature to be used.

The bottom electrode 124 of capacitor 125 is formed (step 206) either onbarrier layer 122 or directly on layer 112 so as to make electricalconnection with the underlying contact structure. Preferably, the bottomelectrode is around 25-100 nm thick, is stable in oxygen, and iscomprised of a noble metal or conductive oxide such as iridium, iridiumoxide, Pt, Pd, PdO_(x), Au, Ru, RuO_(x), Rh, RhO_(x), LaSrCoO₃,(Ba,Sr)RuO₃, LaNiO₃ or any stack or combination thereof. For anyelectrode using noble metals, it is advantageous, from a cost and easeof integration standpoint, to use layers which are as thin as possible.The preferred bottom electrode for a PZT capacitor dielectric is either50 nm Ir or a stack comprised of 30 nm IrO_(x) and 20 nm Ir, which ispreferably deposited by sputter deposition for Ir (Ar) and/or reactivesputter deposition (Ar+O₂) for IrO_(x). Lower ferroelectric depositiontemperatures might allow even thinner electrodes, which would bepreferred. The preferred deposition technique for these layers issputter or reactive sputter deposition or chemical vapor deposition. Inorder to control the stress of the bottom electrode, a post bottomelectrode anneal is, preferably, performed for stress relaxation and/orto improve the microstructure/stability of the bottom electrode. Typicalanneal conditions are 400-600 C for 2-10 min in oxygen or inert gasmixture. This anneal may be performed at any time after the formation ofthe bottom electrode, but preferably prior to the formation of ILD 160

The capacitor dielectric is formed (step 208) on the bottom electrode.Preferably, the capacitor dielectric 126 is less than 150 nm thick (morepreferably less than 100 nm thick—most preferably less than 50 nm thick)and is comprised of a ferro-electric material, such as Pb(Zr,Ti)O₃(PZT—lead zirconate titanate); doped PZT with donors (Nb, La, Ta),acceptors (Mn, Co, Fe, Ni, Al), and/or both; PZT doped and alloyed withSrTiO₃, BaTiO₃ or CaTiO₃; strontium bismuth tantalate (SBT) and otherlayered perovskites such as strontium bismuth niobate tantalate (SBNT);or bismuth titanate; BaTiO₃; PbTiO₃; or Bi₂TiO₃. PZT is the mostpreferable choice for the capacitor dielectric because it has thehighest polarization and the lowest processing temperature of theaforementioned materials. In addition, the preferred Zr/Ti compositionis around 20/80, respectively, in order to obtain good ferroelectricswitching properties (large switched polarization and relativelysquare-looking hysterisis loops). Alternatively Zr/Ti compositions ofapproximately 65/35 may be preferred to maximize uniformity in capacitorproperties. In all situations it is preferred to have donor doped PZTwith roughly 0.05 to 1% donor dopant. The donor dopant improves thereliability of the PZT by helping to control the point defectconcentrations. The preferred deposition technique for these dielectricsis metal organic chemical vapor deposition (MOCVD). MOCVD is preferredespecially for thin films (i.e., films less than 100 nm thick). Thin PZTis extremely advantageous in making integration simpler (less materialto etch), cheaper (less material to deposit therefore less precursor)and allows lower voltage operation (lower coercive voltage for roughlythe same coercive electric field). The capacitor dielectric can bedeposited in either a crystalline/poly-crystalline state or it can bedeposited in an amorphous phase at low temperatures and thencrystallized using a post-deposition anneal. This is commonly done forBi ferroelectric films. The post deposition crystallization anneal canbe performed immediately after deposition or after later process stepssuch as electrode deposition or post capacitor etch anneal. Thepreferred MOCVD PZT approach results in a poly-crystalline filmdeposited at temperatures preferably between 450-600 C (more preferredbetween 500 and 550 C).

The top electrode is formed (step 210) on the capacitor dielectric 126.In this embodiment of the instant invention, the top electrode isillustrated as layer 128 and 130. However, the top electrode can beimplemented in just one layer. Preferably, layer 128 is comprised ofiridium oxide (preferably less than 100 nm thick—more preferably lessthan 50 nm thick) and layer 130 is comprised of iridium (preferably lessthan 100 nm thick—more preferably less than 50 nm thick). In particularit is advantageous for Pb based ferroelectrics to have a conductiveoxide top electrode such as IrO_(x), RuO_(x), RhO_(x), PdO_(x), PtO_(x),AgO_(x), (Ba,Sr)RuO₃, LaSrCoO₃, LaNiO₃, YBa₂Cu₃O_(7-x) rather than apure noble metal so as to minimize degradation due to many oppositestate write/read operations (fatigue). Many of the Bi-containingferroelectrics, such as SBT, can also use noble metal electrodes such asPt, Pd, Au, Ag, Ir, Rh, and Ru and still retain good fatiguecharacteristics. If the top electrode is an oxide, it is advantageous tohave a noble metal layer above it in order to maintain low contactresistance between the top metal contact and oxide. For example, it ispossible that a TiN layer in contact with IrO_(x) might form TiO₂, whichis insulating, during subsequent thermal processes. For any electrodeusing an expensive noble metal such as Pt, Ru, Pd, or Ir, it isadvantageous, from a cost and integration standpoint, to use as thin oflayer as possible. For PZT electrodes, the preferred top electrode stackis comprised of approximately 10 nm Ir deposited by PVD in Ar onapproximately 20 nm IrO_(x) deposited by reactive PVD in Ar+O₂ on top ofthe PZT capacitor dielectric. IrO_(x) is preferred to be deposited below400 C in gas mixtures of between 50% and 80% O₂ with the rest argon witha relatively low sputter power and hence slow deposition rate (preferredto be less than 20 nm/min). It is possible to anneal the top electrodeprior to deposition of the hardmask in order to control the stress inthe top electrode. For example, sputter deposited electrodes willtypically be subject to compressive stress while, the stress in annealedelectrode will be tensile.

Preferably, the entire capacitor stack is patterned and etched (step214) at one time, preferably using different etchant for some of thelayers, but each layer or grouping of layers can be etched prior to theformation of the subsequent layer or layers. If multiple layers or allof the layers are etched simultaneously, then a hard mask layer 132 is,preferably, formed (step 212) over the stack. Preferably, the hard maskis comprised of a material which is thick enough so as to retain itsintegrity during the etch process. The hardmask is, preferably, around50 to 500 nm thick (more preferably around 100 to 300 nm thick—mostpreferably around 200 nm thick) and is comprised of TiAlN, TiN, Ti,TiO₂, Al, AlOx, AlN, TiAl, TiAlOx, Ta, TaOx, TaN, Cr, CrN, CrOx, Zr,ZrOx, ZrN, Hf, HfN, HfOx, silicon oxide, low-k dielectric, or any stackor combination thereof. An example of a hardmask stack is 300 nm ofPECVD deposited SiO₂ on 50 nm of sputter deposited TiAlN or TiN. Thehardmask thickness is controlled by the etch process and the relativeetch rates of the various materials, the thicknesses of the etchedlayers, the amount of overetch required, and the desired remaininghardmask thickness after etching all of the layers. Thinner layersresult in thinner hardmasks. The hardmask may or may not be removedafter the etching of the capacitor stack. If hardmask 132 is notremoved, then it is preferable to form the hardmask of a conductivematerial. However, a non-conductive or semiconductive material may beused, but the interconnection to the top electrode of the capacitorshould preferably be formed through this hard mask so as to make directconnection to the top electrode.

The deposition of the hardmask may be a single or multilayer stack ofdifferent materials in order to better control the hardmask profile andremaining hardmask thickness. The preferred deposition process for metalnitride hard masks is sputter deposition using Ar+N₂ gas mixtures. Thepreferred deposition process for silicon oxide containing hardmasks isTEOS PECVD.

After the contact formation, several different deposition steps havebeen described. In particular, bottom diffusion barrier, bottomelectrode, ferroelectric, top electrode and hardmask. It is likely thatall or nearly all of the pieces of equipment used in these process stepswill be considered potentially contaminated by ferroelectric elements.Therefore these pieces of equipment will be considered dedicated. Thewafers will most likely have a significant, if not a high, contaminationlevel on the backside of the wafers. The next process step afterhardmask deposition is typically lithography. It is likely thatprocessing wafers with backside contamination through this tool willcontaminate the tool and hence result in contamination of clean wafersprocessed through this tool with FeRAM contaminates on their backside.Therefore, it is preferred to clean the backsides of the FeRAM wafers soas to be able to share the lithography equipment and allow clean wafersto be processed through the lithography equipment without any FeRAMcontamination. If the hardmask includes standard materials such as SiO₂then the backside of the wafers might be cleaned prior to deposition ofthis later part of the hardmask. For example, if the hardmask iscomprised of SiO₂ on TiAlN then it is preferred to clean the backside ofthe wafer after the TiAlN deposition process and before the SiO₂deposition process. This will prevent the SiO₂ deposition tool frombeing contaminated, and, hence, allow it to be shared. The cleaningprocess depends on the backside contamination elements and theircontamination levels. Assuming the preferred approach (PVD barrier,hardmask, bottom electrode, top electrode and MOCVD PZT) there will below levels of Ir on the backside but continuous films assuming the MOCVDprocess does not have edge exclusion. Therefore for this type of wafercontamination the preferred backside wafer clean process is wet etchprocess that etches the back, edges and small region on the frontside ofthe wafer near the edge. The etch process is somewhat dependent on thematerials present on the backside of the wafer (for example if it is Si,SiO₂ or Si₃N₄). Wet etching PZT preferably is accomplished using eithera strong fluorine acid or an acid mixture with chlorine and fluorineetch chemistries, such as H₂O+HF+HCl or H₂O+NH₃F+HCl.

It is preferred to perform the pattern and etch process for thecapacitor stack with only one lithography step. This is not only cheaperbut also allows the cell size to be smaller by eliminating misalignmenttolerances which are necessary if more than one lithography step isused. As mentioned before, the preferred approach is to use a hardmaskwith multiple etch processes. These etch process can be modified byusing elevated temperatures in order to achieve even steeper sidewallslopes and, therefore, less critical dimension (CD) growth. In general,it is preferred to minimize CD growth and this can be achieved by havinga steeper etch profile and/or by having thinner layers. The lowtemperature etch process of one embodiment of the instant inventionwhich utilizes a hardmask achieves sidewall slopes of roughly 74 degreesfor the PZT and Ir structures, while the TiAlN structure profile issteeper. The etch rate of Ir and PZT (slow etch rate materials) isroughly 100 nm/min.

The etch process is a dirty process and hence it is likely that the etchtool and the frontside, edge and backside of the wafers will have FeRAMcontamination or have etch residues with FeRAM contamination. It is,therefore, necessary to clean the frontside of the wafer and chemicallyremove etch residues and possibly remove a thin layer of damaged PZT.This post-capacitor-etch wet-clean may, with some etch conditions andchemistries, be as simple as a deionized water (DI water or DIW) clean(tank soak with or without megasonic followed by a spin rinse dry) orthe tank etch might be acid-based in order to improve the clean orremove more damage. The etch process can also result in redeposition ofconductive layers of hard to etch materials such as noble metals on thesidewall. For example, with Ir bottom electrodes it is possible toredeposit Ir on the sidewalls of the PZT which would result inunacceptably high leakage current for the capacitor. The wet clean (step216) can be used to also remove this unwanted material using chemistriesthat etch a little of the ferroelectric material and also will keep theunwanted material in solution. The backside and edges of the wafer arelikely to be significantly contaminated by redeposition of FeRAMelements. They should be removed prior to process in a shared tool.

The capacitor etch results in damage or degradation of the ferroelectricwhich needs to be recovered. One method (step 216) to recover thisdamage is by O₂ plasma exposure (to recover any oxygen loss that mighthave occurred) and/or a RTA or furnace anneal in an inert or oxidizingatmosphere (to add oxygen and to improve the crystallinity of thedamaged surfaces created by the etch process. For PZT this anneal ispreferably performed around 500-650 C (for a furnace anneal the durationis preferably around 15 min to 2 hr) or 550-700 C (for a RTA theduration is preferably around 10 sec to 60 sec).

The sidewalls of the capacitor are, preferably, fairly steep. A sidewalldiffusion barrier is, preferably, formed (step 218) on the capacitorstack prior to the formation of layer 134 and the etching of theinterconnection holes. The sidewall diffusion barrier is importantbecause it allows for the misalignment of the interconnect withoutshorting the capacitor, it protects the capacitor from the diffusion ofmost substances into the capacitor, and it protects the rest of thestructures from the out-diffusion of substances from the capacitor. Inthis embodiment of the instant invention, the sidewall diffusion barrieris illustrated as two layers (layers 118 and 120), but the sidewalldiffusion barrier may be comprised of more or fewer layers. Preferably,layer 118 is around 30 nm thick and is comprised of AlO_(x), Ta₂O₅, AlN,TiO₂, ZrO₂, HfO₂, or any stack or combination thereof; and layer 120 isaround 30 nm thick and is comprised of silicon nitride, AlN, or anystack or combination thereof. The preferred process for depositing themetal oxides or nitrides (which can also be carbo-oxy-nitridesespecially when metalorganic precursors are used) is MOCVD underconditions with minimal free hydrogen (i.e., enough oxygen such that H₂Ois formed rather than H₂). It is also possible to use plasma enhancedCVD or MOCVD process. Alternatively reactive sputter deposition can beused with either Ar+O₂ (for oxides), Ar+N₂ (for nitrides) or Ar+O₂+N₂(for oxy-nitrides). The preferred process for silicon nitride is CVD orPECVD. For low hydrogen process the process gasses should be SiH₄ andN₂, where the flow rate of N₂ is much greater than that of SiH₄. For ahydrogen free PECVD Si₃N₄ deposition process then SiCl₄+N₂ should beused and, again, it is beneficial to have flow rate of N₂ which is muchgreater than that of SiCl₄. For the preferred embodiment listed here,the AlOx layer is used as a Pb and H diffusion barrier while the Si₃N₄layer is used as a contact etch stop.

If the via etch can be modified so that it stops on the sidewall layer(AlOx for example) then it is the etch stop and an additional layer(i.e. Si₃N₄) is not necessary. In this case, the thickness of thesidewall might need to be increased.

An alternative approach is to etch back the sidewall material afterdeposition. This etchback can be done after deposition of the diffusionbarrier layer(s). In one preferred embodiment AlOx (approximately 40 nmis preferred) is deposited followed by an etchback using chlorinecontaining etch gas (BCl₃ or Cl₂ for example) followed by PECVDdeposition of Si₃N₄ (approximately 30 nm is preferred).

If the etch damage has not yet been healed by an anneal, then the annealcan be performed after sidewall diffusion barrier deposition. For PZTthis anneal is, preferably, performed around 500-650 C (for a furnaceanneal for around 15 min to 2 hr) or 550-700 C (for a RTA for around 10sec to 60 sec). Even more preferred is a RTA at 650 C for 1 min. Thisoption is preferred if the choice of interlayer dielectric layer that isformed directly above the ferroelectric capacitor, is a low-K materialwith a maximum thermal budget of less than around 500 C. This anneal canbe performed in an oxidizing or inert atmosphere conditions.

At the beginning of the AlOx deposition process, the front side of thewafer has exposed FeRAM elements. The AlOx deposition process may or maynot result in contamination of the tool (defined to be additional FeRAMcontaminants on subsequent wafers at levels above care-about-level,which is around 10¹⁰ atoms/cm²). If the AlOx deposition process on FeRAMwafers does not result in contamination then it is preferred to wetclean the backside of the wafer prior to depositing this sidewalldiffusion barrier. If the AlOx deposition process on FeRAM wafers doesresult in tool contamination then the preferred backside clean can bedone after this step. The wet chemistry used to clean the backside ofthe wafer might be different from that used the first time since thecontamination of the backside is expected to have different elementalconcentration levels.

Above the sidewall diffusion barrier an interlayer dielectric(s) aredeposited (step 220). A thin dielectric layer (not shown) may be formedbetween each of the interlevel dielectric layers (layers 112, 134 and160). If formed, this thin layer is, preferably, comprised of a siliconnitride, silicon carbide, (SiCNO) or an siliconoxide (preferably ahigh-density plasma oxide). In addition, interlevel dielectric layers112, 134, and 160 are, preferably, comprised of an oxide, FSG, PSG,BPSG, PETEOS, HDP oxide, a silicon nitride, silicon oxynitride, siliconcarbide, silicon carbo-oxy-nitride, a low dielectric constant material(preferably SiLK, porous SiLK, teflon, low-K polymer (possibly porous),aerogel, xerogel, BLACK DIAMOND, HSQ, or any other porous glassmaterial), or a combination or stack thereof. The thermal budget of thefirst and second ILDs (112/134) will impact FeRAM module processdetails. After the deposition of the second interlayer dielectric (134)the preferred process is to planarize the dielectric preferably usingCMP in order to make the surface flat for subsequent lithographyprocess. Depending on the choice of back-end metallization there aremultiple processing options. For etched Al metallization, the primaryoption is for Al or W vias. For damascene metallization (Al or Cu ispreferable) there is the choice of dual damascene (via and metal filledat same time) or separate metal vias (Al, Cu or W) filled prior tosingle damascene metal. All of the process routes using vias and etchedmetal or single damascene metal (referred to as via first) are moresimilar with regards to FeRAM process details compared to dual damasceneapproach.

The process flow for via first is as follows. Depending on themetallization scheme such as Cu, a diffusion barrier/etch stop(typically silicon carbide, silicon nitride, silicon oxygen nitride,silicon carbo-oxy-nitride) will be deposited on the ILD. Lithographywill then be used to form a patterned resist. The contact etch processwill then etch through following stack: antireflection coating (ifpresent), etch stop (if present), ILD, then sidewall diffusionbarrier(s) which overlie the capacitor. It is likely that a differentetch process (chemistry and plasma condition) will be used for eachdifferent material (not because the via depth is less above the contactscompared to in the periphery). In the preferred embodiment where thesidewall diffusion barrier is comprised of Si₃N₄ on AlOx, the Si₃N₄ canact as an etch stop for the ILD etch. This is a standard etch forapplications like gate etch where there is a height difference in theILD thickness between various etched regions. After the ILD etch, theSi₃N₄ and AlOx (which is exposed by the via hole) is subsequently etchedeither using the same or different chemistries. In general, all of theetch steps will be timed because of the small via area. However,endpointing through some realtime measurement (optical emission or gasphase RGA) is preferred. For FeRAM damage control it is especiallyimportant to control the bottom layer sidewall barrier etch process. Itis preferred to use plasma conditions with smaller plasma damage anduniform etch rates with less overetch. After the via etch process, theresist is typically removed by an ash process followed by wet clean anddry.

It is preferred to perform an anneal process step (step 222) after viaetch step to remove etch damage. For a PZT capacitor dielectric, thisanneal is preferably performed around 500-650 C (furnace anneal ispreferable for 15 min to 2 hr) or 550-700 C (RTA is preferable for 10sec to 60 sec). Even more preferred is an RTA process at around 650 Cfor around 1 min. It is also preferred that the anneal be performed inan inert atmosphere (N₂ or Ar) so as not to oxidize the top electrodediffusion barrier. This option is preferred if the choice of interlayerdielectric is a low-K material with a maximum thermal budget of lessthan 500 C. If the maximum thermal budget of the first or second ILDs(112/134) makes this impossible then it is preferred to use the maximumthermal budget possible for that ILD, using an RTA process.

Once the via has been formed it can be filled using the standardmetallization. Typical metallizations and diffusion barriers havealready been described but include metals of Cu, W, doped Al withbarriers of Ta nitride or Ti/TiN. It is preferred to use a short plasmaclean (Ar, Ar+N₂ for example) to clean the bottom of the via prior todeposition of the barrier and metal layers in a tool without any vacuumbreaks between clean and deposition. For Cu, it is preferable to use Ta,TaNx or TiN barrier followed by Cu seed layer deposition. This is,preferably, followed by electroplated or deposited copper. The Cu andbarrier above the interlevel dielectric is, preferably, removed by CMP.For W vias, it is preferable to use Ti/TiN barrier followed by CVD W andthe excess tungsten is removed by etchback or CMP. For Al vias, a Ti/TiNbarrier is followed by Al deposition (CVD, PVD with reflow, or hot PVD).The Al on top of the ILD is either removed or patterned and etched toform metal lines.

The via etch tool, post via clean, anneal tool, metal plasma clean andeven barrier deposition tool can potentially become contaminated withFeRAM elements if the top electrode and PZT are not protected by aconducting hard mask and/or a diffusion barrier or sidewall diffusionbarrier. Even with this protection, etch tool contamination might occurby process mistake, such as large over-etch. Therefore depending on theprocess control and significant monitoring, these tools can be sharedinstead of being dedicated. If the decision is that these tools need tobe dedicated, then it might also be decided to use a backside wet cleanprocess after the wafer leaves the last dedicated tool in order toeliminate any chance that FeRAM contamination might spread to othernon-contaminated tools.

The process flow for dual damascene process flow is now described. Theflow described here is the via first flow but many of theferroelectric-specific aspects will also apply to the other process flowroutes. Depending on the metallization scheme, such as Cu, a diffusionbarrier/etch stop (preferably comprised of silicon carbide, siliconnitride, silicon oxygen nitride, silicon carbo-oxy-nitride) will bedeposited on the ILD. Afterwards a second intermetal layer dielectric(IMD or ILD) is deposited using one of the choices described above(which is, sometimes, followed by another diffusion barrier/etch stop).Lithography is then used to pattern the vias. The vias are then etchedusing the same procedure as described above but this time there arepotentially multiple layers of dielectrics prior to reaching thesidewall diffusion barrier. In addition, the aspect ratio of the first(deep) via for the dual-damascene approach is larger than with just avia. After the resist ash, via etch and clean, the first vias are filledwith resist and lithography for the metal pattern is performed. Themetal pattern is etched into the top dielectric and the depth is eithercontrolled during the etch process or by an etch stop. The resist isthen removed and etch debris removed by wet clean.

The next step is to perform a post etch recovery anneal and now thethermal budget is limited by more dielectric layers. For a capacitordielectric comprised of PZT, this anneal is preferably around 500-650 C(for a furnace anneal of around 15 min to 2 hr) or 550-700 C (for RTAprocess of around 10 sec to 60 sec). Even more preferred is an RTAprocess at around 650 C for around 1 min. It is also preferred that theanneal be performed in an inert atmosphere (N₂ or Ar) so as not tooxidize the top electrode diffusion barrier. This option is preferred ifthe choice of interlayer dielectric is a low K material with a maximumthermal budget of less than 500 C. If the maximum thermal budget of theILD makes this impossible then it is preferred to use the maximumthermal budget possible for that ILD using RTA process.

The next step is to deposit the barrier and metal to simultaneously filldepressions for vias and for metal lines. Typical metallizations anddiffusion barrier have already been described but for a damasceneprocess these include Cu, W and doped Al with barriers of Ta, TaNx, orTi/TiN. It is preferred to use a short plasma clean (Ar, Ar+N₂ forexample) to clean the bottom of the via prior to deposition of thebarrier and metal films in a tool without any vacuum breaks betweenclean and deposition.

The contamination issues with a dual damascene approach are similar tothat of via first approach.

Interconnect 136 is formed so as to provide the electrical connection tothe top electrode. The interconnect is connected to conductor 144 whichis, preferably, connected to drive line 140. Drive line 140 ispreferably brought to a potential around 1.2 volts during the operationof the device and this voltage will be scaled with the logic technologygeneration used.

The following description of one embodiment of the instant inventionrevolves around the process flow as is illustrated in FIG. 2 and thecross-sectional view of memory device 103 as is illustrated in FIGS.3a-3 c. The features in FIGS. 3a-3 c that are designated with the samereference numerals as though in FIG. 1 represent like or similarfeatures.

Referring to FIG. 3a and process step 202 of FIG. 2, interleveldielectric layer 112 is formed and planarized (if necessary) usingstandard semiconductor processing techniques. A photoresist layer (notshown) is formed and contact holes are etched into interlevel dielectriclayer 112. After the photoresist is removed, barrier/liner layer 116 isblanketly formed (preferably using chemical vapor deposition, CVD).Next, conductive material is blanketly formed so as to fill theremainder of the contact hole. The portions of conductive material andliner/barrier layer which overlie interlevel dielectric layer are eitheretched back or polished back using chemical-mechanical polishing (CMP)so as to form plug 114 and liner/barrier 116. It is preferred to use aCMP process so that the surface is as planar as possible. An etchbackprocess might result in a depression which would cause topography forsubsequent processing. The topography might result in degraded localcrystalline texture in ferroelectric layer which might result indegraded capacitor properties.

Referring to step 204 of FIG. 2, a two layer oxidation barrier layer 302is, optionally, formed. First, TiN (preferably around 50 nm) isdeposited using CVD (standard semiconductor industry process) followedby TiAlN (preferably around 30 nm) which is, preferably, deposited byreactive sputter deposition in Ar and N₂. The preferred composition ofthe TiAl target is Ti _(0.6)Al_(0.4)and the deposition process ispreferably performed at around 350 C (wafer temperature) in an Ar and N₂(preferred ratio of around 40/60) with a sputter power set to achieve adeposition rate of around 50 nm/min. Layer 302 (122) should be formed ifthe resistivity of conductor 114 is adversely affected by diffusion ofoxygen into the conductor during a oxygen-containing processes such asMOCVD deposition of the ferroelectric capacitor dielectric or oxygenannealing of the ferroelectric.

Bottom electrode material 304 (124) is formed, next, in step 204. Bottomelectrode material 304 may be comprised of one or more layers dependingon the dielectric material 306 used to form this capacitor. In thisembodiment, layer 304 is preferably comprised of around 20 nm of Irdeposited by sputter deposition below 30 nm of IrO_(x) deposited byreactive sputter deposition in an Ar and O₂ atmosphere. It is preferredto deposit the Ir and IrO_(x) in the same deposition chamber for cost ofownership reasons. The deposition is preferably performed with a wafertemperature of around 300 C in Ar with a sputter power set to achieveroughly 50 nm/min, which is immediately followed by changing the gasatmosphere to Ar+O₂ (30/70) and adjusting the sputter power to achieveroughly 30 /min deposition rate of IrO_(x). An alternative preferredembodiment involves an Ir layer, which is preferably around 100 nm thickor less—more preferably around 50 nm of Ir, as the bottom electrode.

It is preferred that the TiN be deposited in a shared tool and the TiAlNbe deposited in a dedicated tool that is clustered to an Ir and/orIrO_(x) deposition chamber. It is also preferred that the Ir and IrO_(x)be deposited in the same chamber in order to reduce cost of ownership.If the TiN is exposed to air prior to TiAlN deposition then it ispreferred that either a vacuum or inert gas anneal and/or plasma clean(with approximately 1 nm TiN being removed) be performed prior todeposition of the TiAlN.

Referring to FIG. 3b, capacitor dielectric layer 306 is formed in step208. Preferably, layer 306 (126) is comprised of less than 100 nm (50 nmis even more preferred) of PZT which is formed using metal-organic CVD(MOCVD). However, another technique such as chemical solution deposition(sol-gel or metal organic decomposition) can also be used. In addition,the preferred Zr/Ti composition is around 20/80 to obtain goodferroelectric switching properties (large switched polarization andrelatively square looking hysterisis loop). Alternatively, a Zr/Ticomposition of around 65/35 may be preferred in order to minimizeswitched polarization and uniformity in capacitor properties.Additionally, it is preferred to have donor doped PZT with roughly 0.5to 1% donor dopant. The donor dopant improves the reliability of the PZTby helping to control the point defect concentrations. The MOCVD processconditions is preferably performed at a temperature less than around 600C (even more preferred to be less than 550 C). The deposition rate ofthe PZT is set to be between 100 and 200 nm/min. In order to havereproducible control of film composition, the MOCVD process may use twoor even one cocktail of metalorganic precursors mixed together with asolvent to keep it a liquid. The MOCVD reactor is designed to vaporizethe liquids with either one or two vaporizers and precisely control thereactor wall temperatures to prevent the precursors from eitherdecomposing or condensing. An Ar or He carrier gas is, preferably, usedto flow the precursors to the reactor chamber or showerhead where theyare mixed with an oxidizer (O₂, N₂O, or H₂, with O₂ preferred).

In step 210, the top electrode 308/310 (128/130) is formed. For PZTcapacitor dielectrics, the preferred top electrode stack is comprised ofapproximately 10 nm Ir deposited by PVD in Ar on approximately 20 nmIrO_(x) deposited by reactive PVD in Ar and O₂ which is formed on top ofthe PZT capacitor dielectric. It is preferred to deposit IrO_(x) at atemperature below 400 C in gas mixtures of between 50% and 80% O₂ withthe rest argon with a relatively low sputter power and, hence, slowdeposition rate (preferred to be around 20 nm/min). It is also preferredthat the Ir and IrO_(x) be deposited in the same chamber in order toreduce cost of ownership.

In step 212, a hardmask layer is formed, patterned and etched so as toform hardmask 312 (132). Preferably, the hardmask is comprised of amaterial that will not be appreciably etched during the subsequentetching of the capacitor stack. It is also beneficial if the hardmaskmaterial is conductive because it will facilitate in the making theelectrical connection to the top electrode. Preferably, the hardmask iscomprised of 200 nm of sputter deposited TiAlN (40% Al target, Ar+N₂(50/50), 400 C wafer temperature). Alternatively the hardmask iscomprised of 300 nm of SiO₂ on 50 nm of TiAlN where the SiO₂ isdeposited by TEOS PECVD. Another embodiment of a hardmask stack is 30 nmof TiAlN on 120 nm of TiAl, which is formed on 20 nm TiAlO which isformed on 50 nm of TiAlN. All of these layers are, preferably, depositedby sputter deposition in the same chamber where the film composition ischanged during the deposition by varying the gas composition (Ar+N₂(50/50) for nitride, Ar for metal, and Ar+O₂ (90/10) or Ar+N₂+O₂(85/10/5) for oxide). The TiAlN is, preferably, deposited at around 400C with high power to achieve roughly 100 nm/min TiAlN deposition rate.The TiAlN can be replaced by TiN for all of these cases.

It is preferred to clean the backside of the wafer in order to preventcontamination of lithography tools. The wet etch process is somewhatdependent on the materials present on the backside of the wafer (forexample if it is Si, SiO₂ or Si₃N₄). Wet etching PZT may require eithera strong fluorine acid or (even more preferred) an acid mixture withchlorine and fluorine etch chemistries, such as H₂O+HF+HCl orH₂O+NH₃F+HCl. This chemistry will also remove low levels of Ir thatmight be present on the backside/edge of the wafer.

Any conventional form of patterning can be used, but a photoresist maskis preferable. After the patterning mask is formed, the entire stack isetched (step 214) with this one mask. This etch, therefore, needs toetch the hardmask, top electrode, PZT, bottom electrode and bottomelectrode diffusion barrier. There are two preferred etch approaches.

The first etch approach uses one high-density plasma etch chamber toetch all of these layers using the following process sequence in thesame chamber. In each case the remote plasma density is set to nearmaximum power. The hardmask is first etched using chlorine chemistries(unless a SiO₂ hardmask is used, in which case a fluorine and chlorinechemistries are used). An example TiAlN etch recipe is comprised of aCl₂ and N₂ (80/20) etchant with a pressure around 10 mTorr and mediumsubstrate bias. If TiAlOx is part of the hardmask then a short highpower step will preferably be added so as to break through this layer.After- etching the hardmask, the resist is removed using O₂ and N₂(85/15) at a pressure around 40 mTorr and a small substrate bias. TheIr/IrO_(x) top electrode is, preferably, etched using a Cl₂+N₂+O₂chemistry (60/20/20) at high bias (around 100 nm/min etch rate) at lowerpressures (around 3 mTorr). The oxygen is added to insure a highselectivity between the Ir etch and the TiAlN hardmask etch. The PZT isetched in a reactive chemistry containing chlorine and fluorine (forexample Cl₂+CF₄+N₂+O₂. (45/15/20/20)) at intermediate pressures (around10 mTorr) and a high substrate bias (around 100 nm/min etch rate).Again, the oxygen is added to insure good selectivity between PZT etchrate and hardmask etch rate and also to minimize oxygen loss from thePZT. The bottom electrode is, preferably, etched with the same recipe astop electrode. The TiAlN bottom diffusion barrier is, preferably, etchedwith a two-step recipe. The etchant includes Cl₂ and N₂ (80/20). Thepressure is, preferably, around 10 mTorr, and the etch starts out with ashort high power short time step (approximately 30 nm removal) followedby a low power etch step with ˜100% overetch time.

The second etch approach uses a high temperature etch process to etchlow volatility species near room temperature such as Ir, IrO_(x) andPZT. The process sequence is therefore listed below. For an SiO₂hardmask, the SiO₂ is first etched in a dedicated SiO₂ etch chamber(fluorine chemistries only) using standard SiO₂ etch chemistry. Theresist is then removed using standard ash process (such asO₂+N₂+H₂O+optional CF₄). The TiAlN (underneath the SiO₂) will be etchedin the high temperature etch chamber prior to the Ir preferably usingsimilar chemistries and powers as discussed before but with a higherpressure (15-20 mTorr). For a TiAlN hardmask, a near room temperatureetch chamber is used with process conditions similar to those discussedabove. The resist can be removed in that chamber or in a dedicatedchamber as well. The Ir/IrO_(x) top electrode, PZT, IrO_(x)/Ir bottomelectrode and TiAlN bottom electrode diffusion barriers will be etchedat high temperature using etch recipes similar to that discussed at roomtemperatures except the chamber pressure will be between 10-20 mTorr.

It is preferred that the wafers next be cleaned by immersing the waferin a tank with a megasonic clean of DI H₂O or dilute acid (for exampleH₂O+NH₄F+HCl (500:1:1)) for 5 min followed by DI H₂O spin-rinse-dry.Alternatively a spray acid (water) tool can be used.

The next process involves the sidewall diffusion barrier 314/316(118/120) deposition (step 218). An advantage of this layer is that ifit is comprised of a dielectric material, and the contact which isformed to contact the top electrode is slightly misaligned this couldshort the two electrodes of the capacitor but for this insulativediffusion barrier layer. In this embodiment of the instant invention,the diffusion barrier is comprised of a layer 316 (118) of aluminumoxide and a layer 314 (120) of silicon nitride. Other barrier layers canbe used, but this combination of layers seems to provide the bestdiffusion barrier properties while not adversely affecting the capacitorstack or the necessary anneal steps which follow. The preferred approachis to deposit AlOx (15-50 nm or more preferably 30 nm by PVD or 20 nm byMOCVD). Sputter deposition of AlOx will, preferably, be performed usingpure Al target with pulsed DC power supply using Ar+O₂ (92/8) at 300 Cwafer temperature with a low deposition rate (less than 15 nm/min).

It is preferred that the ferroelectric capacitor etch tool, wet bath,spin rinse dry and sidewall diffusion tool be dedicated for the FeRAMprocess module and not be shared in order to prevent crosscontamination. It is preferred not to dedicate equipment so s to be onlyused in the fabrication of FeRAM structures and nothing else, and it isrecommended that contamination tests be performed on all but the etchtool to verify that tools cannot be shared.

It is preferred to clean the backside of the wafer in order to preventcontamination of subsequent dielectric deposition tools. The wet etchprocess is somewhat dependent on the materials present on the backsideof the wafer (for example if it is Si, SiO₂ or Si₃N₄). Wet etching PZTtypically requires either strong fluorine acid or even more preferred anacid mixture with chlorine and fluorine etch chemistries such asH₂O+HF+HCl or H₂O+NH₃F+HCl. This chemistry will also remove low levelsof Ir that might be present on the backside/edge of the wafer.

The next preferred step is deposition of a thin Si₃N₄ etch stop (around15-50 nm more preferably 20 nm) by PECVD with preferable process ofSiH₄+N₂ (1 -100 flow rate).

There are many possible interlayer dielectrics (ILD) that can bedeposited above the capacitor. The goal of the FeRAM process module isnot to restrict this choice but to allow the process flow to usewhichever is best for the rest of the device (logic section forexample). However, if PZT is used, this limits the thermal budget (afterthe PZT deposition) to less than around 600 C. Otherwise the choice willmake not difference.

If the maximum thermal budget after ILD deposition is less than 600 C,then it is preferred to perform an anneal after AlOx deposition (600 to650 C if possible in O₂ for 60 sec by RTA).

After ILD deposition the sample is planarized preferably by CMP.

There are many possibilities in the choice of backend metallization.Again, the goal of the FeRAM process module is to not restrict thisdecision but to allow the process flow to use whatever is the best forthe rest of the device such as logic part. This choice impacts the FeRAMprocess module if it impacts the thermal budget after via etch and bythe via etch process itself. Two backend metallization strategies willbe discussed. Two choices include a W via with Al metallization and thesecond includes a Cu dual-damascene process with a low-K dielectric (lowthermal budget).

For the example of W vias and Al metallization, it is preferable if theILD above the capacitor can tolerate a thermal budget of greater than600 C.

After CMP planarization, lithography is performed to pattern the vias.The vias are then etched using a four step etch (antireflection coatingetch, ILD etch, Si₃N₄ etch, and AlOx etch). Except for the AlOx etch,this is a standard via etch process. The preferred AlOx etch processuses a high density plasma with large DC bias at low pressures (˜5mTorr). The AlOx and Si₃N₄ etch process are tuned to achieve uniform andrepeatable etching over the wafer. This minimizes the amount of overetchthat is needed. It is important that this etch stop at the top surfaceof hardmask 312/132 or etch only partially into hardmask 312/132.Endpoint detection of the etch steps is preferred. After via etch thewafers are cleaned using standard via clean process, which is typicallya solvent clean followed by DI spin/rinse/dry.

In step 222 and prior to the conductor 132 and liner 138 formation, theanneal of the instant invention is performed so as to remove damageintroduced by the capacitor stack processing (such as the ferroelectricmaterial etch, encapsulation, and contact etch) into the capacitordielectric and to improve the electrical properties of these features.If this anneal is not done at this point (i.e., if the anneal is donewith the PZT stack exposed on its sidewalls), then it will result in theloss of Pb near the perimeter of each capacitor. This loss in Pb in thePZT film will result in the degradation of the electrical properties ofsmall capacitors (capacitors with large perimeter to area ratios) afterthe capacitor integration. The anneal of the instant invention is,preferably, performed after the interlevel dielectric is formed and thevia holes patterned and etched, but prior to the filling of the viaswith the conductive material. The anneal conditions are: around 400 to800 C (more preferably around 500 to 700 C—most preferably around 600 C)for a duration of around 30 seconds to 5 minutes (more preferably foraround 1 to 4 minutes—most preferably around 2 minutes) in an inertatmosphere such as Ar, N₂ or vacuum. If the ILD thermal budget does notallow this then it is preferred to anneal using as much of the availablethermal budget as possible by RTA.

A diffusion barrier liner is then deposited by sputter deposition of TiNon Ti after a sputter clean of the via using Ar or Ar+H₂.

It is preferred that none of these tools be dedicated. But ifcontamination tests show FeRAM contamination on clean wafers processedthrough these tools, then all of the tools after contact etch that arecontaminated need to be dedicated and a wafer backside clean to removeFeRAM contamination needs to be performed at this point in the processflow.

If used, CVD W is then deposited to fill the via and CMP or etchback isused to remove W from the top surface. Aluminum metallization is thendeposited. This is preferably comprised of a stack of TiN on Al (Cudoped), which is on TiN, which is situated on Ti. The Al is thenpatterned and etched. All subsequent processes are not impacted by theFeRAM process module. In particular it is preferable if a forming gasanneal is used in the metallization process steps or at the end of theprocess flow since this anneal will in general be at less than 500 C.

For a specific example of Cu dual damascene with a low K dielectric (lowthermal budget), a maximum thermal budget of 450 C is preferred afterthe deposition of the ILD above the capacitor. It is preferred that ananneal is performed as described previously after the sidewall barrierdeposition in order to remove capacitor etch damage.

After CMP, a thin etch stop (15 nm) of SiCON is deposited by CVDfollowed by deposition of a low-K, low thermal budget IMD, followed bydeposition of another thin (15 nm) etch stop of SiCON. Lithography isthen used to pattern vias. The via etch should then etch through thefollowing layers: antireflection coating (if present), SiCON, IMD,SiCON, ILD, Si₃N₄, then AlOx. Details of the Si₃N₄ and AlOx have alreadybeen discussed. The resist is then removed and the vias cleaned(preferably using wet process). Next lithography is used to pattern themetal features. The metal etch then etches preferably only throughantireflection coating (if present), SiCON and IMD thereby stopping onthe lower SiCON layer. The resist is then removed and metal and vias arecleaned. It is preferable to perform an anneal with maximum thermalbudget available either after via etch clean or after metal etch cleanin N₂ or preferred inert gas. The next step is metal deposition, whichconsists of a plasma clean followed by deposition of a TaNx seed layer,Cu seed layer and then electroplate or deposition of Cu to fill thevias. The Cu and TaN are removed from above the IMD by CMP.

It is preferred that none of the tools used for the above processing bededicated. But if contamination tests show FeRAM contamination on cleanwafers processed through these tools, then all of the tools aftercontact etch that are contaminated need to be dedicated, and a waferbackside clean to remove FeRAM contamination needs to be performed atthis point in the process flow.

Hardmask Formation Embodiment

Referring to the embodiment of the instant invention as is illustratedin FIGS. 4a-4 h, the hardmask of the instant invention is, preferably,comprised of multiple layers. It is desirable to use a hardmask isdesirable to etch the ferroelectric stack, which includes the topelectrode, ferroelectric material, bottom electrode, and bottomelectrode diffusion barrier, because photoresist does not have enoughetch selectivity for the difficult-to-etch electrodes and theferroelectric layer. Another advantage of the hardmask is that it allowsthe etch process of underlying materials to be performed at temperaturesabove the photoresist softening temperature (typically around 150 C).High-temperature etching of ferroelectrics and noble metal-containingelectrodes allows steeper etch profiles and transforms a primarilyphysical etch into one with a significant chemical component. Inaddition, it is highly desirable to leave a conducting diffusion barrierabove the top electrode for the following purposes: to provideadditional protection from hydrogen diffusion, if an appropriatematerial is used; to act as an etch stop for the subsequent contact etchthereby preventing the contact etch equipment from being contaminated byetching either electrode or ferroelectric material; and to improve thesidewall diffusion barrier coverage, and, thereby, the process margin isimproved by keeping the contact etch from etching into or exposing thetop electrode or the ferroelectric layer. Depending on the combinationof materials, the hardmask may consist of two layers, three layers (mostpreferable) or four layers. In general, the top layer 408 is,preferably, comprised of a material that will withstand the etching oftop electrode 310/308, ferroelectric material 306 and bottom electrode304 so that layer 408 will act as the hardmask for the etching of thoselayers. For hardmasks consisting of three or four layers, the layer 406above the bottom layer is preferably comprised of a material that willwithstand the etching of diffusion barrier layer 302 so that this layer,and top layer 408 if the tope layer is not completely etched away, willact as the hardmask during the etching of diffusion barrier layer 302.Layers 406 and 408 may or may not be completely removed during thepatterning and etching of layers 302, 304, 306, 308, and 310 to form thecapacitor stack. However, layer 402 will, preferably, remain intact, tosome extent, after the etching to form the capacitor stack. Preferably,layer 402 is comprised of a material that will: act as an additionalhydrogen barrier with respect to the top electrode; act as an etch stoplayer during the subsequent sidewall diffusion barrier etch back processand contact formation process; encapsulate, at least partially the topelectrode to minimize cross contamination; and reduce the risk ofexposing the ferroelectric material during subsequent contact etchingwhen there is any misalignment.

Referring to FIG. 4a, structures 112, 114 and 116 and layers 302, 304,306, 308, and 310 are preferably comprised of the same materials and areformed as described above. Layer 402 which is next to the top electrodewill be referred to as the top electrode diffusion barrier. The materialof this layer is, preferably, conductive. In addition, the material oflayer 402 is, preferably, one that will provide a good hydrogendiffusion barrier and, potentially, a via etch stop. Preferably, layer402 is comprised of: TiN, TiAlN, TaN, CrN, HfN, ZrN, TaSiN, TiSiN,TaAlN, CrAlN or any stack or combination thereof. The preferredcomposition of the top electrode diffusion barrier 402 is either TiN orTiAlN and the thickness is preferably, on the order of 10 to 100 nm,more preferably around 20 to 75 nm—most preferably around 50 nm.

The layer 406, which is formed directly above the top electrodediffusion barrier 402, is comprised of: AlOx, TiO_(x), TiAlO_(x),TaO_(x), CrO_(x), HfO_(x), ZrO_(x), TaSiO_(x), TiSiO_(x), TaAlO_(x),CrAlO_(x), Pt, Ir, IrO_(x), Rh, RhOx, Au, Ag, Pd, PdO_(x), or any stackor combination thereof. The thickness of layer 406 is determined by thethickness and composition of layer 302 and the etch selectivity betweenlayer 406 and layer 302 for the etchant used to etch layer 302.Preferably, layer 406 is on the order to 10 to 50 nm thick, morepreferably around 20 to 40 nm thick, most preferably around 30 nm thick.

The top layer in a three layer structure, layer 408, which becomes thetop two layers in a four layer structure, should act as a hard mask foretching the layers underneath it except for the bottom electrodediffusion barrier 302. Layer 408 is, preferably, comprised of Ti, TiN,TiAl, TiAlN, Al, AlN, Ta, TaN, Zr, ZrN, Hf, HfN, TiSi, TiSiN, TaSi,TaSiN, TaAl, TaAlN, CrAl, CrAlN, SiO₂ (doped or undoped), SiN, SiON,SiC, SiCN, SiCON, or a low K dielectric, or any stack or combinationthereof. Preferably, the thickness of layer 408 is on the order of 10 to400 nm, more preferably around 50 to 300 nm—more preferably around 100to 200 nm.

In addition, a thin layer of a hard-to-etch material, such as Al₂O₃, maybe formed on layer 408, and under BARC layer 410—if it is formed, ifphotoresist layer 412 is not thick enough to withstand the hardmaskstack opening etch.

Another option is that the top layer of a four-layer hardmask would becomprised of a metal nitride of roughly the same composition as themetal layer underneath it. For example, if the third layer from bottomis comprised of Ti or TiAl then the top layer might be comprised of TiNor TiAlN, respectively.

When the hardmask consists of only two layers, the top layer should,preferably, act as both a hard mask and a bottom electrode diffusionbarrier etch stop. This more stringent requirement limits the possiblecomposition of this layer to: SiO₂ (doped or undoped), SiN, SiON, SiC,SiCN, SiCON, or a low K dielectric. Two-layer hardmasks are somewhatsimpler to fabricate than three or four-layer hardmasks, and an exampleof a simple two-layer hardmask consists of SiO₂/TiN, where the TiN is onthe bottom.

Although the number of potential combinations of materials is enormous,in general it is preferred from a cost of ownership standpoint to havesimilar materials in these layers. Several examples of combinations ofmaterials are listed below. In this, the layer listed last is the layerlocated next to the top electrode (i.e., it is the bottom-most layer ofthe hardmask stack): TiN/Ti/TiO_(x)TiN, TiAlN/TiAl/TiAlO_(x)/TiAlN,TiAlN/TiAlO_(x)/TiAlN, or TiN/TiO_(x)/TiN. These are examples ofpreferred combinations where the films can all be deposited in the samechamber (PVD or CVD chamber) with little, if any, break betweendifferent film compositions. Using a PVD example, use of a Ti targetfacilitates the changing of film composition of the different layers ofthe hardmask by merely changing the gas composition from Ar (for theformation of a titanium layer), to Ar and N₂ (for the formation of atitanium nitride layer), to Ar and O₂ (for formation of a titanium oxidelayer). It is desirable to have this ease in deposition or otherwise thecost of depositing these complex stacks becomes significant. Similarly,there are advantages in using hardmask compositions that can bedeposited using the bottom electrode diffusion barrier. For example, ifa TiAlN bottom electrode diffusion barrier is deposited in a clusterchamber configured to deposit the bottom electrode, which is comprisedof IrO_(x) and/or Ir, and then deposit the TiAlN bottom electrodediffusion barrier, then the hard mask and top electrode combination ofTiAlN/TiAlO_(x)/TiAlN/Ir/IrO_(x) can just as easily be deposited usingthe same equipment.

Referring to FIG. 4b, after photoresist mask 412 is formed andpatterned, BARC layer 410 is etched to remove it in region 401 while itremains in capacitor stack areas 400. BARC layer 410 is preferablyetched in a gas comprised of: Cl₂/Ar, Cl₂/O₂, CF₄/Ar/O₂, HBr/O₂, or anycombination thereof. Preferably, the bias on the substrate is relativelylow. The preferred embodiment for the etching of BARC layer 410 inconjunction with etching layer 408 involves using an etchant comprisingAr and Cl₂ at a flow ratio around 25:80 sccm, respectively, with asource power around 1000 Watts, a bias power of around 120 Watts, anambient pressure of around 5 mTorr, an ESC chuck temperature of around45 C and backside helium at around 8 Torr.

Referring to FIG. 4c, depending on the composition of the hardmasklayers, different etchants are, preferably, utilized to pattern theselayers. Aluminum, aluminum nitride, and TiAlN are, preferably, etchedused a chlorine-based chemistry, such as Cl₂/Ar, Cl₂/BCl₃, or anycombination thereof. Silicon dioxide and silicon nitride are,preferably, etched in a fluorine-based chemistry (such as CF₄, CHF₃,C₂F₆, C₄F₈, or any combination thereof. Titanium aluminum oxide, TiAlON,and AlOx are, preferably, etched in a chlorine-based plasma etchantincorporated into a plasma along with a fluorine-containing gas, such asCF₄, to increase the etch rate. As can be seen in FIG. 4c, some erosionof photoresist layer 412 occurs during the etching of the hardmask. Itis important to note, that while the photoresist is present during theseetching steps, the ambient temperature during these steps should be heldto less than the photoresist glass temperature (which is around 140 C)so as to avoid resist reticulation.

Referring to FIG. 4d, photoresist 412 and BARC layer 410 are,preferably, removed at this point in the process. The photoresist is,preferably, stripped in an O₂-containing plasma which may or may notinclude an additional gases, such as Ar, N₂, H₂O, CF₄, CHR₃, NF₃, orNH₃. Preferably, a resist ash can be performed after the stripping stepat a low temperature (i.e., near room temperature) or at a highertemperature.

Referring to FIG. 4e, the etch top electrode layers 308 and 310 can beetched using the same etchant. Preferably, this is accomplished in asingle process chamber. In fact, the whole hardmask and capacitor stacketch process is, preferably, carried out in one process chamber or aseries of chambers connected in a clustered tool environment. Theetchant used to etch top electrode layer 308 and 310 should include anoxygen-containing gas (such as O₂) if hardmask layer 408 is comprised ofa metal, a metal alloy, or an oxide or nitride thereof to improve theetch selectivity (i.e., to remove a greater proportion of layers 308 and310 than of layer 408). Additional gases, such as Ar, N₂, Cl₂, BCl₃,CF₄, SF₆, or a combination thereof, may be included. A higher bias ispreferred for high ion energy and, thus, steeper sidewalls.

Referring to FIG. 4f, ferroelectric layer 306 is etched. Preferably, thegas mixture should include an oxygen-containing gas if layer 408 iscomprised of a metal, a metal alloy, or an oxide or nitride thereof soas to improve the etch selectivity (i.e. so as to remove more of layer306 than of layer 408). Chlorine and/or BCl₃ can be used to etch PZT,but addition of O₂ improves the selectivity with respect to thehardmask. Preferably, with careful control of CF₄ gas flow, the desiredPZT etch rate and etch selectivity can be achieved.

Referring to FIG. 4g, bottom electrode 304 is etched. A similar etchantand etching process as that used to etch top electrode 308/310 may beused. However, the bias power and gas mixture may be altered to reducethe redeposition of the bottom electrode material onto the bottomelectrode-ferroelectric material interface along the capacitorperimeter. Part or all of layer 408 may be consumed by the conclusion ofthis step. The entire stack etch process (after the removal of thephotoresist layer) may be performed at various temperatures (preferablygreater than 250 C).

Referring to FIG. 4h, diffusion barrier layer 302 is etched to remove itin regions 401, which may be regions between capacitors or regions overthe logic devices, power devices, I/O devices, and/or analog devices.During this etching step, part or all of hardmask layer 406 is consumed.A high bias breakthrough step is, preferably, performed to start etchinglayer 302 to optimize the process throughput. This breakthrough stepremoves thin oxidized portions of layer 302 which were formed during theover etch of bottom electrode 304. In a preferred embodiment, thisetching step is performed using an etchant comprised of argon andchlorine. The etchant gases are introduced at a flow rates of 50:60sccm, respectively, under the following conditions: source power isaround 1000 Watts, bias power is around 75 Watts, ambient pressure isaround 10 mTorr, ESC chuck temperature around 45 C, and backside heliumat around 8 Torr.

As mentioned above, it is preferred to etch the entire capacitor stackand hardmask either in one chamber or in a series of chambers connectedin a cluster tool environment. Some examples of how such a cluster ofchambers could be used with different materials and etch processes aredescribed below.

In the example of a two-layer hardmask that includes an SiO₂ layer,which requires fluorine-based etch chemistry, a two or three-chambercluster is preferred. The first step is to etch the BARC and then theSiO₂ layer using an SiO₂-based chemistry at low temperatures, preferablyless than 140 C. This is, preferably, followed by ashing of thephotoresist either in the same chamber or, alternatively, ashing theresist in another clustered ash tool, preferably at a high temperature).The wafers are then transferred to another chamber where the rest of thelayers are etched either at low temperatures or high temperatures. Thehigh-temperature etch processes are preferred since they result in thecapacitor stack having a steeper sidewall slope.

For hardmasks comprised of three or more layers, which include layersthat can be easily etched in chlorine-based chemistries, such asTiN/Ti/TiOx/TiN or TiAlN/TiAlOx/TiAlN, a one, two, or three-chambercluster tool is preferred. The first step is to etch the hardmask in alow temperature, preferably less than 140 C, etch process as discussedabove. When the rest of the capacitor stack, especially theferroelectric layer, will be etched using a high-temperature etchprocess, the wafers should be transferred from one chamber to another atleast once. The resist can be ashed in a third chamber preferentially ata high temperature, preferably greater than 140 C, using H₂O in the ashchemistry. Otherwise, the resist can be ashed either in thelow-temperature, preferably less than 140 C, metal etch chamber ortransferred to a high-temperature metal etch chamber for removal of theresist. The later case would involve the use of two etch chambers. Whenthe capacitor stack layers are etched in the low-temperature etchchamber, it is preferred to leave the wafers there and to perform anin-situ ash, and then etch the rest of the layers in the same chamber.This results in all of the etching of the capacitor stack and hardmaskbeing performed in one chamber.

Low-temperature processing is preferred. However, if a high-temperaturechamber is utilized, then the ash process is, preferably, performed inthis chamber using H₂O in the ash chemistry. The principal reason to ashusing H₂O with these types of electrodes is to promote the formation ofa metal oxide on the sides of the hard mask. This oxide will result inbetter hardmask profiles after the stack etch, and therefore results inbetter CD control and top electrode diffusion barrier profile. A uniformthickness above the top electrode is preferred.

There are a few advantages of using metals instead of metal nitrides asthe material of the hardmask layer. The first advantage is that metalswill, in general, form thicker oxides, which is beneficial on the sidesof the hardmask after resist ash. The second advantage is that thedeposition rate and stress of metals is, in general, lower than that ofnitrides. The higher deposition rate of metals helps lower the cost ofownership while the lower stress helps reduce adhesion problems.

The advantage of the four-layer hardmask is realized when the hardmaskis deposited using PVD. In particular, if all of the films aresequentially deposited in the same chamber, then it is important tocontrol target conditioning. For example, if a TiAl target used,depositing the hardmask combination of TiAlN/TiAl/TiAlO_(x),/TiAlN canbe done using different gas mixtures. Completing this process with thedeposition of TiAlN as the top layer results in a better targetcondition for the deposition of the next layer, which is also TiAlN.

Although specific embodiments of the present invention are hereindescribed, they are not to be construed as limiting the scope of theinvention. Many embodiments of the present invention will becomeapparent to those skilled in the art in light of methodology of thespecification. The scope of the invention is limited only by the claimsappended.

What we claim is:
 1. A ferroelectric capacitor formed over asemiconductor substrate, the ferroelectric capacitor comprising: abottom electrode formed over the semiconductor substrate, said bottomelectrode comprised of a bottom electrode material; a top electrodeformed over said bottom electrode and comprised of a first electrodematerial; a ferroelectric material situated between said top electrodeand said bottom electrode; and a hardmask formed on said top electrodeand comprising a bottom hardmask layer and a top hardmask layer formedon said bottom hardmask layer, said top hardmask layer able to withstand etchants used to etch said bottom electrode, said top electrode,and said ferroelectric material to leave said bottom hardmask layersubstantially unremoved during said etch and said bottom hardmask layerbeing comprised of a conductive material which substantially acts as ahydrogen diffusion barrier.
 2. The ferroelectric capacitor of claim 1,wherein said bottom hardmask layer is comprised of a material selectedfrom the group consisting of: TiN, TiAlN, TaN, CrN, HfN, ZrN, TaSiN,TiSiN, TaAlN, CrAlN and any stack or combination thereof.
 3. Theferroelectric capacitor of claim 1, wherein said top hardmask layer iscomprised of a material selected from the group consisting of: dopedSiO₂, undoped SiO₂, SiN, SiON, SiC, SiCN, SiCON, a low K dielectric, andany stack or combination thereof.
 4. The ferroelectric capacitor ofclaim 1, wherein said top hardmask layer is comprised of a first tophardmask layer situated on a second top hardmask layer.
 5. Theferroelectric capacitor of claim 4, wherein said first top hardmaskmaterial is comprised of a material selected from the group consistingof: Ti, TiN, TiAl, TiAlN, Al, AlN, Ta, TaN, Zr, ZrN, Hf, HfN, TiSi,TiSiN, TaSi, TaSiN, TaAl, TaAlN, CrAl, CrAlN, SiO₂ (doped or undoped),SiN, SiON, SiC, SiCN, SiCON, or a low K dielectric, and any stack orcombination thereof.
 6. The ferroelectric capacitor of claim 4, whereinsaid second top hardmask layer is comprised of a material selected fromthe group consisting of: AlOx, TiO_(x), TiAlO_(x), TaO_(x), CrO_(x),HfO_(x), ZrO_(x), TaSiO_(x), TiSiO_(x), TaAlO_(x), CrAlO_(x), Pt, Ir,IrO_(x), Rh, RhOx, Au, Ag, Pd, PdO_(x), and any stack or combinationthereof.
 7. The ferroelectric capacitor of claim 1, wherein said topelectrode is comprised of a material selected from the group consistingof: iridium, iridium oxide, and any combination or stack thereof.
 8. Theferroelectric capacitor of claim 1, wherein said bottom electrode iscomprised of a material selected from the group consisting of: iridium,iridium oxide, and any combination or stack thereof.
 9. Theferroelectric capacitor of claim 1, wherein said ferroelectric materialis comprised of PZT.
 10. A ferroelectric capacitor formed over asemiconductor substrate, the ferroelectric capacitor comprising: abottom diffusion barrier formed over the semiconductor substrate, saidbottom diffusion barrier comprised of a first conductive material whichsubstantially acts as a hydrogen diffusion barrier; a bottom electrodeformed on said bottom diffusion barrier and comprised of a bottomelectrode material; a top electrode formed over said bottom electrodeand comprised of a first electrode material; a ferroelectric materialsituated between said top electrode and said bottom electrode; and ahardmask formed on said top electrode and comprising a bottom hardmasklayer and a top hardmask layer formed on said bottom hardmask layer,said top hardmask layer able to with stand etchants used to etch saidbottom diffusion barrier, said bottom electrode, said top electrode, andsaid ferroelectric material so as to leave said bottom hardmask layersubstantially unremoved during said etch and said bottom hardmask layerbeing comprised of a second conductive material which substantially actsas a hydrogen diffusion barrier.
 11. The ferroelectric capacitor ofclaim 10, wherein said bottom hardmask layer is comprised of a materialselected from the group consisting of: TiN, TiAlN, TaN, CrN, HfN, ZrN,TaSiN, TiSiN, TaAlN, CrAlN and any stack or combination thereof.
 12. Theferroelectric capacitor of claim 10, wherein said top hardmask layer iscomprised of a material selected from the group consisting of: dopedSiO₂, undoped SiO₂, SiN, SiON, SiC, SiCN, SiCON, a low K dielectric, andany stack or combination thereof.
 13. The ferroelectric capacitor ofclaim 10, wherein said top hardmask layer is comprised of a first tophardmask layer situated on a second top hardmask layer.
 14. Theferroelectric capacitor of claim 13, wherein said first top hardmaskmaterial is comprised of a material selected from the group consistingof: Ti, TiN, TiAl, TiAlN, Al, AlN, Ta, TaN, Zr, ZrN, Hf, HfN, TiSi,TiSiN, TaSi, TaSiN, TaAl, TaAlN, CrAl, CrAlN, SiO₂ (doped or undoped),SiN, SiON, SiC, SiCN, SiCON, or a low K dielectric, and any stack orcombination thereof.
 15. The ferroelectric capacitor of claim 13,wherein said second top hardmask layer is comprised of a materialselected from the group consisting of: AlOx, TiO_(x), TiAlO_(x),TaO_(x), CrO_(x), HfO_(x), ZrO_(x), TaSiO_(x), TiSiO_(x), TaAlO_(x),CrAlO_(x), Pt, Ir, IrO_(x), Rh, RhOx, Au, Ag, Pd, PdO_(x), and any stackor combination thereof.
 16. The ferroelectric capacitor of claim 10,wherein said top electrode is comprised of a material selected from thegroup consisting of: iridium, iridium oxide, and any combination orstack thereof.
 17. The ferroelectric capacitor of claim 10, wherein saidbottom electrode is comprised of a material selected from the groupconsisting of: iridium, iridium oxide, and any combination or stackthereof.
 18. The ferroelectric capacitor of claim 10, wherein saidferroelectric material is comprised of PZT.
 19. The ferroelectriccapacitor of claim 10, wherein said bottom diffusion barrier iscomprised of a material selected from the group consisting of: TiN,TiAlN, TaN, CrN, HfN, ZrN, TaSiN, TiSiN, TaAlN, CrAlN and any stack orcombination thereof.